JPH0526331B2 - - Google Patents

Info

Publication number
JPH0526331B2
JPH0526331B2 JP60013490A JP1349085A JPH0526331B2 JP H0526331 B2 JPH0526331 B2 JP H0526331B2 JP 60013490 A JP60013490 A JP 60013490A JP 1349085 A JP1349085 A JP 1349085A JP H0526331 B2 JPH0526331 B2 JP H0526331B2
Authority
JP
Japan
Prior art keywords
etching
aluminum
etched
gas
uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60013490A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61174634A (ja
Inventor
Takashi Yamazaki
Haruo Okano
Takehiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Shibaura Mechatronics Corp
Original Assignee
Toshiba Corp
Shibaura Engineering Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Shibaura Engineering Works Co Ltd filed Critical Toshiba Corp
Priority to JP1349085A priority Critical patent/JPS61174634A/ja
Publication of JPS61174634A publication Critical patent/JPS61174634A/ja
Publication of JPH0526331B2 publication Critical patent/JPH0526331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP1349085A 1985-01-29 1985-01-29 ドライエツチング方法 Granted JPS61174634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1349085A JPS61174634A (ja) 1985-01-29 1985-01-29 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1349085A JPS61174634A (ja) 1985-01-29 1985-01-29 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS61174634A JPS61174634A (ja) 1986-08-06
JPH0526331B2 true JPH0526331B2 (en]) 1993-04-15

Family

ID=11834555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1349085A Granted JPS61174634A (ja) 1985-01-29 1985-01-29 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS61174634A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
JPH06103665B2 (ja) * 1987-01-29 1994-12-14 東京エレクトロン株式会社 処理装置
EP0512677B1 (en) * 1991-04-04 1999-11-24 Hitachi, Ltd. Plasma treatment method and apparatus
JP3327285B2 (ja) * 1991-04-04 2002-09-24 株式会社日立製作所 プラズマ処理方法及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
JPS57133633A (en) * 1981-02-13 1982-08-18 Anelva Corp Dry-etching device
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys

Also Published As

Publication number Publication date
JPS61174634A (ja) 1986-08-06

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